发明名称 Semiconductor device with reduced current consumption in standby state
摘要 A logic portion outputs to a DRAM portion a start address and an end address indicating a memory region where data to be stored is present prior to transition to power down mode having reduced current consumption. In the power down mode, a refresh control unit holds the start address and the end address and controls refresh to be carried out for data only in a region requiring refresh. The power supply of the logic portion is set in off state in the power down mode and accordingly a semiconductor device can consume reduced current while holding data.
申请公布号 US6414894(B2) 申请公布日期 2002.07.02
申请号 US20010778062 申请日期 2001.02.07
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 OOISHI TSUKASA;TSUJI TAKAHARU;ISHIKAWA MASATOSHI;HIDAKA HIDETO;KATO HIROSHI
分类号 G11C11/403;G06F1/26;G11C5/14;G11C7/00;G11C7/10;G11C11/401;G11C11/406;G11C11/407;H01L27/148;H03K19/00;H03K19/096;(IPC1-7):G11C7/00 主分类号 G11C11/403
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