发明名称 |
Programmable built in self test for embedded DRAM |
摘要 |
In the present invention a built in self test (BIST) for an embedded memory is described. The BIST can be used at higher levels of assembly and for commodity memories to perform functional and AC memory tests. A BIST controller comprising a finite state machine is used to step through a test sequence and control a sequence controller. The sequence controller provides data and timing sequences to the embedded memory to provide page mode and non-page mode tests along with a refresh test. The BIST logic is scan tested prior to performing the built in self test and accommodations for normal memory refresh is made throughout the testing. The BIST also accommodates a burn-in test where unique burn-in test sequences can be applied. |
申请公布号 |
US6415403(B1) |
申请公布日期 |
2002.07.02 |
申请号 |
US19990334569 |
申请日期 |
1999.06.21 |
申请人 |
GLOBAL UNICHIP CORPORATION |
发明人 |
HUANG JING-RENG;HUANG CHIH-TSUN;WU CHI-FENG;WU CHENG-WEN |
分类号 |
G01R31/3185;G11C29/16;(IPC1-7):G01R31/28 |
主分类号 |
G01R31/3185 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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