发明名称 Methods for forming ZPROM using spacers as an etching mask
摘要 A cost-competitive, dense, CMOS compatible ZPROM memory array design and method of manufacture is disclosed. The method of manufacture includes a novel method for forming extremely thin diodes and thin strips of other materials such as conductors by using oxide spacers as an etching mask.
申请公布号 US6413812(B1) 申请公布日期 2002.07.02
申请号 US20010874811 申请日期 2001.06.05
申请人 MICRON TECHNOLOGY, INC. 发明人 HARSHFIELD STEVEN T.
分类号 H01L21/8246;H01L27/112;(IPC1-7):H01L21/823 主分类号 H01L21/8246
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