| 摘要 |
The invention relates to a non-volatile, static random access memory (nvSRAM) in which there are at least two, non-volatile memory cells associated with each SRAM memory cell. The non-volatile memory cells are capable of being programmed with whatever bit of information is present in the SRAM at two different times. In one embodiment, the non-volatile memory cells are capable of being randomly programmed, i.e., programmed in any order. Further, the bits of data programmed into the non-volatile memory cells can be recalled in any order, i.e., randomly recalled.
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