发明名称 Method and apparatus for providing deposited layer structures and articles so produced
摘要 A merged ion beam and plasma vapor deposition chamber and associated manufacturing process are disclosed in which thin film depositions occur in a merged deposition chamber. The chamber utilizes both ion beam and RF/DC magnetron sputtering in a single chamber. The deposition of the layers can occur in the chamber without substrate transfer in a low vacuum, eliminating the need for multiple chambers and associated timely wafer transfer steps. The result is a film deposition and growth process which utilizes the advantages unique to each of the RF/DC and IBD processes without the film degradation that occurs in robot wafer transfer chambers found in combination systems known in the art.
申请公布号 US6413380(B1) 申请公布日期 2002.07.02
申请号 US20000638645 申请日期 2000.08.14
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 PINARBASI MUSTAFA
分类号 C23C14/34;C23C14/46;C23C14/54;C23C14/56;H01J37/317;H01J37/34;(IPC1-7):C23C14/34 主分类号 C23C14/34
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