发明名称 |
Method and apparatus for providing deposited layer structures and articles so produced |
摘要 |
A merged ion beam and plasma vapor deposition chamber and associated manufacturing process are disclosed in which thin film depositions occur in a merged deposition chamber. The chamber utilizes both ion beam and RF/DC magnetron sputtering in a single chamber. The deposition of the layers can occur in the chamber without substrate transfer in a low vacuum, eliminating the need for multiple chambers and associated timely wafer transfer steps. The result is a film deposition and growth process which utilizes the advantages unique to each of the RF/DC and IBD processes without the film degradation that occurs in robot wafer transfer chambers found in combination systems known in the art.
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申请公布号 |
US6413380(B1) |
申请公布日期 |
2002.07.02 |
申请号 |
US20000638645 |
申请日期 |
2000.08.14 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
PINARBASI MUSTAFA |
分类号 |
C23C14/34;C23C14/46;C23C14/54;C23C14/56;H01J37/317;H01J37/34;(IPC1-7):C23C14/34 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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