| 发明名称 |
Plasma etching of silicon using a chlorine chemistry augmented with sulfur dioxide |
| 摘要 |
A method of etching silicon using a chlorine and sulfur dioxide gas chemistry. An embodiment of the method is accomplished using a 20 to 300 sccm of chlorine and 2 to 100 sccm of sulfur dioxide, regulated to a total chamber pressure of 2-100 mTorr.
|
| 申请公布号 |
US6415198(B1) |
申请公布日期 |
2002.07.02 |
| 申请号 |
US19990344878 |
申请日期 |
1999.06.25 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
NALLAN PADMAPANI C.;KUMAR AJAY;CHINN JEFFREY D. |
| 分类号 |
G06F19/00;H01L21/302;H01L21/3065;(IPC1-7):G06F19/00 |
主分类号 |
G06F19/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
