SEMICONDUCTOR DEVICE HAVING BUMP ELECTRODE

摘要

PURPOSE: A semiconductor device having a bump electrode is provided to form a semiconductor device suitable for miniaturization of the size and pitch of the bump electrode by forming a barrier layer and a diffusion preventive layer only in an opening of a protective layer. CONSTITUTION: An active layer(32) of a semiconductor element(31) is covered to form a protective layer(34) and opening parts made to face element electrodes provided in the active surface of the semiconductor element are formed in the protective layer. Barrier layers(35) for covering the element electrodes, diffusion preventive layers(36), with which the barrier layers are covered, and bump electrodes(37) provided on the diffusion preventive layer are respectively formed in the interiors of these opening parts. A material of a hardness lower than those of the materials for the barrier layers and the element electrodes is preferably used as the material for the bump electrodes.