SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor device is provided to minimize the corrosion possibility of metal by eliminating the necessity of a CMP process that can cause strong corrosion. An interlayer dielectric(3) having a via hole is formed on a substrate(1). A barrier layer(5) is formed on the interlayer dielectric including the via hole. A metal interconnection(7) is formed in the via hole. A passivation layer(9) is formed on the metal interconnection. The passivation layer is made of a different material from that of the metal interconnection. The metal interconnection is lower than the barrier layer formed on the interlayer dielectric. The metal interconnection can be made of a copper material. The passivation layer can be made of an aluminum material.