Method of creating ground to avoid charging in SOI products

摘要

An SOI device structure is provided which facilitates mitigation of charge build up caused by floating body effects. A plurality of local interconnects are formed from a top insulating layer to a top silicon layer of the SOI device structure. A ground contact is then formed from the top insulating layer to a bottom substrate layer of the SOI device structure. The ground contact extends through the insulating layer, an isolation region and an oxide layer to the bottom substrate layer.