| 摘要 |
A process for the chemical-mechanical polishing of isolation layers based on the shallow trench isolation (STI) technology, using a basic polishing slurry which contains from about 5 to about 12.5% by weight of a colloidal silica abrasive, characterized in that the polishing slurry is applied to the wafer surface at a temperature of about 35° C. to about 80° C., increases the polishing selectivity with regard to the rate at which silica is removed compared to the rate at which silicon nitride is removed. |
