发明名称 Cleaning and etching methods and their apparatuses
摘要 A cleaning method for removing fats, oils, and silicon small particles, which are conventionally difficult to remove, adhering to devices and carriers used to manufacture a semiconductor wafer or a semiconductor device. An etching method is also disclosed. XeF<SUB>2 </SUB>gas produced by sublimation is made to contact with an object to be cleaned in a vacuum atmosphere so as to decompose and gasify the oils and fats and to remove silicon small particles by etching. Prior to the cleaning, when a trace amount of residual water is left in the vacuum atmosphere, H<SUB>2</SUB>O reacts with XeF<SUB>2</SUB>, and HF is produced. For example, a native oxide SiO<SUB>2 </SUB>formed on the surface of silicon small particles can be removed, and XeF<SUB>2 </SUB>directly reacts with silicon, therby enabling etching. The cleaning etching rates are extremely high.
申请公布号 AU2267002(A) 申请公布日期 2002.07.01
申请号 AU20020022670 申请日期 2001.12.17
申请人 SUMITOMO PRECISION PRODUCTS CO., LTD. 发明人 TOKIKO KANAYAMA;HIROAKI KOUNO
分类号 A23K1/14;B01D11/04;B08B5/00;C03C23/00;C10G21/18;C23F1/00;C23G1/00;G01L21/30;G01R31/00;H01L21/02;H01L21/304;H01L21/306;H01L21/3065 主分类号 A23K1/14
代理机构 代理人
主权项
地址