FABRICATION METHOD OF WHITE LED

摘要

A method for manufacturing a white LED is provided to form various colors and various wavelengths of light by using only one active layer. A buffer layer(12), a u-GaN layer(14), an n-GaN layer(16) doped with Si, and a SiO2 layer(18) are sequentially grown on a sapphire substrate(10). Two or more window/mask patterns having different ratios are formed on the SiO2 layer. The SiO2 layer corresponding to a lower part of the window pattern of the window/mask patterns is etched. A pyramid type ELOG GaN layer(30) is grown on the unetched SiO2 layer corresponding to a lower part of the mask pattern. An InGaN/GaN MQW(Multiple Quantum Well) active layer(32) is grown on a slope of the pyramid type ELOG GaN layer. A P-GaN layer(34) is grown on the InGaN/GaN MQW active layer.