| 摘要 |
PURPOSE: An LDO(Low Drop Output) regulator is provided to reduce a chip size and to improve a current driving ability by forming one chip merged with a power transistor and a control IC(Integrated Circuit) and changing the power transistor structure from a lateral structure to a vertical structure. CONSTITUTION: An LDO regulator comprises an epitaxial layer(206) formed on a semiconductor substrate(200), an N+ B/L(202) grown to penetrate the epitaxial layer(206) and the semiconductor substrate(200), a P B/L(204a) for collector formed to overlap with the N+ B/L(202), P B/Ls(204b) grown to penetrate the epitaxial layer(206) and the semiconductor substrate(200) at both sides of the N+ B/L(202), first isolation regions(210a) connected with the P B/Ls(204b) and second isolation regions(210b) connected with the P B/L(204a) respectively formed in the epitaxial layer(206), an N-well(208) partially connected with the P B/L(204a), and a P+-type emitter region(212) and an N-type base region(214) formed in the N-well(208) apart each other.
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