| 摘要 |
<p>PURPOSE: A fabrication method of a bonding pad of semiconductor devices is provided to prevent a crack and a breakdown of an interlayer dielectric by completely removing the interlayer dielectric between a bonding pad and metal interconnections and to reduce a contact resistance by increasing a bonding region. CONSTITUTION: A blocking layer(22), a first interlayer dielectric(23), net-type metal interconnections(24) are sequentially formed on a semiconductor substrate(21). Then, second IMDs(Inter Metal Dielectrics) are formed on the net-type metal interconnections(24) and the net-type metal interconnections(24) are then exposed by selectively etching the second IMDs. By completely removing the first interlayer dielectric(23) under the exposed metal interconnections(24), a depressed bonding pad contact region is formed to expose the blocking layer(22). Plugs(29a) are formed on the exposed blocking layer(22) and metal sidewalls are simultaneously formed on both sidewalls of the exposed second IMDs(25a,26a,27a). A bonding pad(30) is formed on the plugs(29a) and the metal sidewalls.</p> |
