TRANSISTOR GATES INCLUDING COBALT SILICIDE, SEMICONDUCTOR DEVICE STRUCTURES INCLUDING THE TRANSISTOR GATES, PRECURSOR STRUCTURES, AND METHODS OF FABRICATION

摘要

A method for fabricating a transistor gate with a conductive element that includes cobalt suicide includes use of a sacrificial material as a place-holder between sidewall spacers of the transistor gate until after high temperature processes, such as the fabrication of raised source and drain regions, have been completed. In addition, semiconductor devices (e.g., DRAM devices and NAND flash memory devices) with transistor gates that include cobalt suicide in their conductive elements are also disclosed, as are transistors with raised source and drain regions and cobalt suicide in the transistor gates thereof. Intermediate semiconductor device structures that include transistor gates with sacrificial material or a gap between upper portions of sidewall spacers are also disclosed.