| 摘要 |
PURPOSE: An isolation layer formation method of semiconductor devices is provided to improve a gap-filling using a Si growth and to reduce manufacturing costs by using double spacers. CONSTITUTION: A first oxide layer(22) and a nitride layer(23) is sequentially formed on a silicon substrate(21). A first trench is formed by selectively etching the nitride and first oxide layers and over-etching portions of the substrate. A first spacer is formed at inner sidewalls of the first trench. A second trench is formed by etching the bottom surface of the first trench. A second spacer(27a) is formed at inner sidewalls of the second trench. Then, a silicon epitaxial layer is formed by growing the exposed silicon substrate in the second trench.
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