| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem of phosphorus being implanted in a crystalline semiconductor film by ion doping method, but the required phosphorus concentration for gettering is 1×1020/cm3 or higher, thus obstructing the recrystallization after annealing, and adding phosphorus at a high concentration increases the required process time for doping, resulting in a lowered throughput in a doping process. SOLUTION: This invention is characterized by forming impurity regions, containing an additive of a periodic table class 18 element and heat treatment for gettering to segregate a metal element contained in the semiconductor film on the impurity regions. The impurity regions may contain a one conductivity- type impurity.
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