| 摘要 |
PROBLEM TO BE SOLVED: To suppress the deterioration of the luminous efficiency of a light- emitting layer due to thermal strains generated in the sticking interface between different kinds of semiconductor substrates and, at the same time, to obtain a linear current/voltage characteristic in the interface. SOLUTION: The semiconductor device has a sticking structure of a GaAs substrate 1 and an InP substrate 2 made of different kinds of semiconducting materials having different lattice constants. In the sticking interface between the substrates 1 and 2, an amorphous layer 3 composed of the constituent atoms of the substrates 1 and 2 is formed. Since the amorphous layer 3 is formed, the deterioration of the luminous efficiency of the light emitting layer which emits light through laser oscillation, due to thermal strains generated in the interface, can be suppressed, and in addition, a linear current-voltage characteristics can be obtained in the interface even when the light-emitting layer which emits light through laser oscillation is formed near the interface.
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