| 摘要 |
PROBLEM TO BE SOLVED: To provide an insulating film capacity evaluation device which can accurately measure the C-V characteristics of an ultrathin insulating film without being directly affected by a tunnel leakage current, and can evaluate also the boron punch-through of a P+ gate electrode in the MIS structure of the ultrathin insulating film, and to provide a method of evaluating the capacity of the insulating film. SOLUTION: In an insulating film capacity evaluation device, the MIS structure of a known capacity (C1) and at least each one piece of the dielectric and the capacitor of at least one kind of dielectrics and capacitors are made to connect with each other in series to the MIS structure of an unknown capacity (C2) of an object to be measured, to measure the C-V characteristics of an ultrathin insulating film, and the unknown capacity is calculated from the resultant capacity.
|
