METHOD AND DEVICE FOR MONITORING PLASMA ETCHING

摘要

PROBLEM TO BE SOLVED: To provide a method and a device for monitoring an etching capable of detecting the correct end of etching of a product substrate without reducing the quantity of light of a light emitting spectrum of plasma, even if deposits are produced in a vacuum processing chamber by etching. SOLUTION: The end of etching can be stably detected without reducing the passing quantity of plasma light, even if a product produced by an etching reaction is deposited on the inside of the vacuum processing chamber, by detecting the plasma light passing through a base material layer 61.