发明名称 |
TRANSFER METHOD FOR ELEMENT, ELEMENT HOLDING SUBSTRATE AND FORMATION METHOD THEREFOR |
摘要 |
PROBLEM TO BE SOLVED: To provide the transfer method of an element, the manufacturing method of an element holding substrate and the element holding substrate with which transfer in a short time is enabled, without increasing processes or lowering the yield of the transfer. SOLUTION: The boundary of a first substrate 10 and a light-emitting diode 12 formed on the first substrate 10 is selectively irradiated with energy beams, while transmitting them through the first substrate 10 and the light-emitting diode 12 is selectively peeled off. The light-emitting diode 12 is transferred to an element holding layer 13 formed on the element holding substrate and then transferred to a second substrate 18 further. By the irradiation of the boundary with the energy beams, the element is easily peeled off. |
申请公布号 |
JP2002185039(A) |
申请公布日期 |
2002.06.28 |
申请号 |
JP20000380944 |
申请日期 |
2000.12.14 |
申请人 |
SONY CORP |
发明人 |
IWABUCHI TOSHIAKI;YANAGISAWA YOSHIYUKI;OHATA TOYOJI |
分类号 |
H01L21/00;H01L21/683;H01L21/762;H01L25/075;H01L27/15;H01L33/00;H01L33/20;H01L33/24;H01L33/32 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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