发明名称 TRANSFER METHOD FOR ELEMENT, ELEMENT HOLDING SUBSTRATE AND FORMATION METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide the transfer method of an element, the manufacturing method of an element holding substrate and the element holding substrate with which transfer in a short time is enabled, without increasing processes or lowering the yield of the transfer. SOLUTION: The boundary of a first substrate 10 and a light-emitting diode 12 formed on the first substrate 10 is selectively irradiated with energy beams, while transmitting them through the first substrate 10 and the light-emitting diode 12 is selectively peeled off. The light-emitting diode 12 is transferred to an element holding layer 13 formed on the element holding substrate and then transferred to a second substrate 18 further. By the irradiation of the boundary with the energy beams, the element is easily peeled off.
申请公布号 JP2002185039(A) 申请公布日期 2002.06.28
申请号 JP20000380944 申请日期 2000.12.14
申请人 SONY CORP 发明人 IWABUCHI TOSHIAKI;YANAGISAWA YOSHIYUKI;OHATA TOYOJI
分类号 H01L21/00;H01L21/683;H01L21/762;H01L25/075;H01L27/15;H01L33/00;H01L33/20;H01L33/24;H01L33/32 主分类号 H01L21/00
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