| 摘要 |
PROBLEM TO BE SOLVED: To enable a semiconductor laser element to be divided into chips with accuracy at a yield of >=90% and to have excellent end faces by controlling the surface roughness of the rear surface of a nitride semiconductor substrate. SOLUTION: The semiconductor laser element is divided into the chips at a high yield, by adjusting the surface roughness Ra of the rear surface, namely, the surface on which the semiconductor layer is not formed of the GaN-based semiconductor substrate composed of a semiconductor wafer, which is constituted by laminating a semiconductor layer upon a hexagonal GaN substrate and has cleavage planes on its side faces to <=300Å.
|
