| 摘要 |
PROBLEM TO BE SOLVED: To make the etching stopping position controllable with accuracy at the time of forming a ridge section by etching a clad layer, in a semiconductor laser element. SOLUTION: First and second clad layers 22, 26a, and 26b sandwiching an active layer 24 and have larger band gaps than the active layer 24 has, and a third clad layer 27 interposed between the second clad layers 26a and 26b, are laminated upon a semiconductor substrate 21, the ridge section 30 is formed for forming a prescribed current passage stripe area of the active layer 24 by etching from the second clad layer 26b side, and then, an undercut section 31 which constricts a current is formed in the third clad layer 27. The layer 27 is formed of a material, that stops the etching which is performed for forming the ridge section 30. Consequently, etching which is performed for forming the ridge section 30 can be stopped surely at the position of the third clad layer 27, and the ridge section 30 can be formed in a uniform height with accuracy.
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