发明名称 ELECTRON BEAM DEVICE AND MANUFACTURING METHOD OF DEVICE USING THE SAME
摘要 <p>PROBLEM TO BE SOLVED: To prevent increase of aberration and to increase the throughput of the evaluation of the sample equivalent number of times as the optical system, and further to increase the throughput of the evaluation of the sample same beam number of times as the multi-beams. SOLUTION: The electron beam device comprises an electron optical system that forms an electric field by an electrode 16 arranged between the objective lens 15 and the sample S and irradiates electron beams on the sample and a sample position detecting system that irradiates a measuring light flux on the sample from oblique direction and detects the position of the sample in the height direction by detecting the measuring light flux reflected by the sample. A pair of measuring openings for passing the measuring light flux on the face of the objective lens side at the position deviated from the optical axis of the electron optical system is formed on the electrode 16 nearest the sample, and a concave part enabling to pass the measuring light flux is provided on the sample side of the electrode in symmetry with the axis.</p>
申请公布号 JP2002184338(A) 申请公布日期 2002.06.28
申请号 JP20000376879 申请日期 2000.12.12
申请人 NIKON CORP;EBARA CORP 发明人 HAMASHIMA MUNEKI;NAKASUJI MAMORU;NOMICHI SHINJI;SATAKE TORU
分类号 G01B15/00;G01N23/225;G01R31/302;G21K5/00;G21K5/04;H01J37/20;H01J37/28;H01L21/66;(IPC1-7):H01J37/20 主分类号 G01B15/00
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