发明名称 BUFFER LAYER STRUCTURE BASED ON DOPED CERIA PRESENTING OPTIMUM LATTICE ALIGNMENT WITH YBCO LAYER IN CONDUCTOR, AND METHOD OF MANUFACTURING THE STRUCTURE
摘要 <p>PROBLEM TO BE SOLVED: To provide a buffer layer structure based on a doped ceria for obtaining an optimum lattice alignment with a YBCO layer in a conductor, a lattice alignment layer used in the structure, and a method of manufacturing the structure. SOLUTION: This buffer layer comprises a doped CeO2 layer with dopant, and the CeO2 layer has the YBCO superconductive layer thereon. The CeO2 layer is formed into a lattice alignment layer.</p>
申请公布号 JP2002184252(A) 申请公布日期 2002.06.28
申请号 JP20010308289 申请日期 2001.10.04
申请人 NEXANS 发明人 BELOUET CHRISTIAN
分类号 H01B12/06;H01B13/00;H01L39/24;(IPC1-7):H01B12/06 主分类号 H01B12/06
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