| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, wherein the problem of duty cycle dependency of an input signal which is shown in inverter delay time is canceled. SOLUTION: This semiconductor device is used in a CMOS inverter circuit and provided with a BOX layer 2 formed on a silicon substrate 1, an SOI film 3 which is formed on the BOX layer and composed of single crystal Si, a gate oxide film 4 formed on the SOI film 3, a gate electrode 5 formed on the gate oxide film, and diffusion layers 7, 8 of a source/drain region, which are formed in the source/drain region of the SOI film 3. In the case where a power source voltage of 0.6 V is used, the thickness TSOI of the SOI film 3 is at least 0.084μm and at most 0.094μm, and the impurity concentration of the SOI film 3 is at least 7.95×1017/cm3 and at most 8.05×1017/cm3.
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