发明名称 METHOD FOR PREVENTING CORROSION OF ALUMINUM IN CMP
摘要 PURPOSE: A method for preventing corrosion of an aluminum in CMP(Chemical Mechanical Polishing) is provided by using a dummy pattern. CONSTITUTION: In the method for preventing corrosions during CMP of an aluminum, a line area having a line-width of sub-micrometer has one percent more than of a total aluminum metallization including a line and a pad. Also, the aluminum metallization pattern is fabricated by connecting a main pattern to a dummy pattern. At this time, the dummy pattern area has smaller than that of the main pattern area.
申请公布号 KR20020051288(A) 申请公布日期 2002.06.28
申请号 KR20000080891 申请日期 2000.12.22
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, HYEONG JUN
分类号 H01L21/30;H01L21/02;H01L21/306;H01L21/321;H01L21/3213;H01L23/528;(IPC1-7):H01L21/30 主分类号 H01L21/30
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