| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device operating at a high speed while exhibiting excellent short channel characteristics and driving current in which introduction of metallic elements into a silicon substrate is suppressed by employing a gate insulation film having a dielectric constant higher than that of a silicon oxide. SOLUTION: A high insulation titanium oxide film 103 having a dielectric constant higher than that of a silicon oxide is provided, as a gate insulation film, on a semiconductor substrate and a gate electrode 104 is disposed thereon to obtain a field effect transistor. Longitudinal end part of the titanium oxide film 103 is located inward of the source side and drain side end parts of the gate electrode 104 and the end part of the titanium oxide film 103 is located in a region where the gate electrode 104 overlaps the source region and the drain region 107 on the plan view in the inventive semiconductor device.
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