METHOD FOR MANUFACTURING CAPACITOR

摘要

PURPOSE: A fabrication method of a capacitor is provided to prevent a bridge between capacitors when an MPS(Meta-stable Poly Silicon) formation by forming low a height of a plug compared to a height of an insulating layer. CONSTITUTION: A plurality of bit lines(33) are formed on a semiconductor substrate(31). An insulating layer(35) having contact holes to expose the bit lines is formed on the bit lines(33). A polysilicon plug(38) is formed by filling a polysilicon layer into the contact holes. At this time, the height of the insulating layer(35) is higher than that of the polysilicon plug(38). After forming a capacitor oxide on the resultant structure, lower electrodes(40) are formed to connect to the polysilicon plug(38). The lower electrodes(40) are isolated by CMP(Chemical Mechanical Polishing). The isolated lower electrodes are exposed by removing the capacitor oxide. An MPS(41) is formed on the exposed surface of the lower electrode.