发明名称 SEMICONDUCTOR DEVICE INCLUDING QUANTUM DOTS, ITS FABRICATING METHOD AND SEMICONDUCTOR LASER
摘要 <p>PROBLEM TO BE SOLVED: To provide a semiconductor device in which injection efficiency of carriers into quantum dots can be prevented from lowering. SOLUTION: A plurality of quantum dots are distributed discretely on the major surface of a substrate comprising a first semiconductor. A coating layer comprising a second semiconductor is formed on an imaginary plane where the quantum dots are distributed. A barrier layer is disposed at least partially in a region of imaginary plane where the quantum dots are not arranged. The barrier layer is formed of a third semiconductor or insulating material having a band gap larger that that of the first and second semiconductors.</p>
申请公布号 JP2002184970(A) 申请公布日期 2002.06.28
申请号 JP20000381842 申请日期 2000.12.15
申请人 FUJITSU LTD 发明人 MUKAI TAKETERU
分类号 H01L29/06;H01S5/34;H01S5/343;(IPC1-7):H01L29/06 主分类号 H01L29/06
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