发明名称 |
SEMICONDUCTOR DEVICE INCLUDING QUANTUM DOTS, ITS FABRICATING METHOD AND SEMICONDUCTOR LASER |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device in which injection efficiency of carriers into quantum dots can be prevented from lowering. SOLUTION: A plurality of quantum dots are distributed discretely on the major surface of a substrate comprising a first semiconductor. A coating layer comprising a second semiconductor is formed on an imaginary plane where the quantum dots are distributed. A barrier layer is disposed at least partially in a region of imaginary plane where the quantum dots are not arranged. The barrier layer is formed of a third semiconductor or insulating material having a band gap larger that that of the first and second semiconductors.</p> |
申请公布号 |
JP2002184970(A) |
申请公布日期 |
2002.06.28 |
申请号 |
JP20000381842 |
申请日期 |
2000.12.15 |
申请人 |
FUJITSU LTD |
发明人 |
MUKAI TAKETERU |
分类号 |
H01L29/06;H01S5/34;H01S5/343;(IPC1-7):H01L29/06 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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