WAFER POLISHING SLURRY AND CHEMICAL AND MECHANICAL POLISHING METHOD BY USE OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a wafer polishing slurry whose removal selection ratio of a silicon oxide film to a silicon nitride film is enhanced and a chemical and mechanical polishing method by the use of the same. SOLUTION: A wafer polishing slurry contains abrasive particles, a solution in which the above abrasive particles can be suspended, and a quaternary ammonium compound represented by formula 1, (in formula, R1, R2, R3, and R4 are each separate organic acid residues, X- is an acid radical, and n is an integer of 1 to 3).