| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a metal abrasive solution which is capable of polishing tantalum, a tantalum alloy, tantalum nitride, or other tantalum compounds used as a barrier layer conductor at a higher rate than a wiring metal film and forming a buried metal film pattern of high reliability and a method of polishing a board with the same. SOLUTION: Abrasive solution comprises a conductor oxidizing agent, an metal oxide dissolvent, a protective film forming agent, and water, its polishing rate ratio of metal to a barrier layer (barrier layer/metal) is 1 or above, and its polishing rate ratio of a barrier layer to an insulating film layer (barrier layer/insulating film layer) is 10 or above. A polished film is polished through a method in which a polishing plate and a board are relatively moved, pressing the surface of the board containing copper, copper alloy, and a barrier layer against the abrasive cloth while the above metal abrasive solution is applied to the abrasive cloth of the polishing plate.</p> |
