ELECTROSTATIC CHUCK AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To obtain an electrostatic chuck having a dielectric layer of aluminum nitride and attracting a wafer onto the dielectric layer in which generation of particles due to thermal expansion of the wafer is prevented after the wafer is attracted by means of the chuck. SOLUTION: The electrostatic chuck has a dielectric layer 5 of aluminum nitride and attracts a wafer onto the dielectric layer 5. The surface 1a of the dielectric layer 5 has a center line mean surface roughness of 25 nm or less and is covered with a surface layer 3 of 200 nm thick or above composed of a material harder than aluminum nitride composing the dielectric layer.