| 摘要 |
PROBLEM TO BE SOLVED: To improve the insulating breakdown voltage of a gate insulating film and the off characteristics of a thin-film transistor in an active matrix type liquid crystal display having the thin-film transistor. SOLUTION: A scanning signal line 2 including a gate electrode 11 made of aluminum and an aluminum alloy is formed on the upper surface of a glass substrate 1. Then, using an alkali-based solution, the scanning signal line 2 including the gate electrode 11 is subjected to light etching. Then, since the sectional shape of the edge of the scanning signal line 2 is in a tapered shape, the insulating breakdown voltage of a gate insulating film 12 can be improved. Also, especially, even if an organic substance such as photoresist residue is present on the gate electrode 11, it is removed by light etching, thus preventing the gate insulating film 12 from becoming a film that has taken in the organic substance, and hence improving the off characteristics of the thin-film transistor.
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