METHOD OF TREATING SURFACE OF SILICON WAFER, AND SEMICONDUCTOR WAFER

摘要

PROBLEM TO BE SOLVED: To enough remove a natural oxidation film or organic matters, even in a process of treating the surface of a silicon wafer and hydrogen-baking a semiconductor wafer at a lowered temperature. SOLUTION: The silicon wafer surface treating method applied prior to epitaxially growing a semiconductor film on the silicon wafer surface comprises a hydrogen baking step of heat treating the silicon wafer surface with an atmospheric gas of hydrogen, and this baking step satisfies the relation P<3×1017t0.5943e-36.549(1000/T), where P is the pressure (Pa), t is the heat treating time (min) and T is the heat-treatment temperature (K).