| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a transistor gate having excellent controllability, reproducibility, and reliability since the controllability, reproducibility, and reliability are insufficient in the present method when a notch is to be formed at the gate to reduce the overlap capacity in the transistor gate. SOLUTION: The multilayer gate structure including first and second layers mutually having a different oxidation rate is formed and the notch is formed in the first layer by thermal oxidation treatment, thus manufacturing the transistor gate with the notch.
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