| 摘要 |
PROBLEM TO BE SOLVED: To obtain a method for fabricating a semiconductor device having a plurality of semiconductor elements formed on the surface of a semiconductor substrate 1 while being isolated by a trench isolation layer 10, in which the performance and reliability are prevented from lowering due to damage or contamination incident to formation of trenches 9, and the fabrication cost is reduced by eliminating the need of a CMP process, thereby eliminating the need of new investment to polishing system. SOLUTION: Semiconductor elements are formed on the surface of a semiconductor substrate 1. After the surface of the elements is protected by a surface protective film 7, isolation trenches 9 are made at the isolating positions in the surface part of the semiconductor substrate, and then the isolation trenches are filled with an insulator 10. A positioning reference pattern 2 of the substrate 1 is preferably formed at first and used as a positioning reference in the following process.
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