| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a field effect transistor wherein a T shaped gate electrode is accurately formed uniformly at a desire position close to a source side in a recess to reduce a source resistance, gate resistance and gate/drain capacitance and to improve a breakdown voltage. SOLUTION: In the transistor manufacturing process, alignment is carried out for direct or indirect writing of a source or drain region to form a gate electrode. The process includes steps of forming a groove reaching a semiconductor substrate and positioned on a source side on a straight line, and a plurality of dot-shaped holes reaching the substrate and positioned on a drain side in layers defining the shape of a contact part between a gate electrode and semiconductor; forming a recess shape between a source and gate and a recess shape between the gate and drain by isotropic etching; and depositing metallic atoms or particles into the groove in a vertical or oblique direction to the surface of the compound semiconductor substrate.
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