| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor wafer heat-treating device which can prevent the occurrence of the thickness fluctuation of a film or the depth nonuniformity of a diffusion layer when the film or layer is formed on a semiconductor wafer by controlling the temperature in a process tube so that the temperature may become uniform. SOLUTION: This semiconductor wafer heat-treating device is provided with a cylindrical main heater 13 which is positioned to surround the cylindrical process tube 4 which houses the semiconductor wafer WF and heat-treats the wafer WF, an annular mobile heater 17 which is positioned coaxially with the main heater 13 on the outer peripheral side of the heater 13, and a driving device 18 which drives the mobile heater 17 in the axial direction of the process tube 4 and, at the same time, changes the driving speed of the heater 17 in accordance with the temperature in the tube 4. Consequently, the semiconductor wafer WF housed in the process tube 4 can be heated so that the temperature of the wafer WF may become uniform by making the moving speed of the heater 17 slower in a low-temperature section and faster in a high-temperature section in the tube 4.
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