| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device whose junction leak is suppressed. SOLUTION: This manufacturing method of a semiconductor device includes a side wall nitride film forming process in which a side wall nitride film covering a whole main surface of a silicon semiconductor substrate 50 is formed, a side wall forming process in which parts of the side wall nitride film are removed so as to have the parts covering side walls of gate electrodes 2 left as the side walls 5, and a damage removing process in which damaged parts produced on the main surface by the side wall forming process are converted into silicon oxide films 9 by a thermal oxidation treatment. |
