| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide the simple crystalline silicon substrate which is the substrate thinner than a conventional substrate and capable of supplying the photovoltaic element of the performance equal to the one using the conventional substrate, for which the mix-in of impurities is reduced and the utilization rate of silicon is high (loss is low), without the need of huge heat energy in the manufacturing process. SOLUTION: The material for which the P-type or N-type impurity semiconductor layer of thickness 2 nm-40μm composed of poly crystalline silicon containing the dopant of boron or phosphorus or the like, and the true semiconductor layer of the thickness 2 nm-40μm composed of the polycrystalline silicon, are laminated on a base material in the order, is used as this substrate for the photovoltaic element.</p> |
