| 摘要 |
PROBLEM TO BE SOLVED: To provide a barrier layer which prevents copper from infiltrating into a semiconductor substrate when copper-embedded wiring is formed by using a copper-plating device. SOLUTION: This method of manufacturing a semiconductor device comprises the steps of opening a connection aperture in an interlayer insulating film on a highly concentrated diffusion region, laminating a first laminated film on the inner wall of the connection aperture, filling a tungsten film in the connection aperture, laminating an interlayer insulating film, opening an aperture at a site continuous with the connection aperture and forming a groove wiring portion, laminating a second conductive laminated film and planarizing after depositing copper on the whole surface. In order to achieve the above purpose, in this method, the first laminated layer has a structure that a TiN film is laminated on a TaN film, and the second laminated film has a structure that a copper seed layer is laminated on a TaN film.
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