发明名称 ETCHING METHOD AND ITS APPARATUS
摘要 PROBLEM TO BE SOLVED: To prevent a conductive material entering a barrier metal and a conductive material formed on a substrate from diffusing into the substrate in the following process. SOLUTION: Unnecessary portions of the conductive materials 17, 18 that are formed on the barrier metal 16 formed on the surface of the substrate W, are to be a wiring and/or an electrode, and are positioned at the peripheral portion of the substrate W; and at least a part of the barrier metal 16 positioned nearer to the outside of the substrate W than the removed portions of the conductive materials 17, 18; are removed.
申请公布号 JP2002184751(A) 申请公布日期 2002.06.28
申请号 JP20000380654 申请日期 2000.12.14
申请人 EBARA CORP 发明人 KATAKABE ICHIRO;FUKUNAGA AKIRA;KIHARA SACHIKO;ONO HARUKO
分类号 H01L21/28;H01L21/306;H01L21/3213;(IPC1-7):H01L21/306;H01L21/321 主分类号 H01L21/28
代理机构 代理人
主权项
地址