| 摘要 |
PURPOSE: A semiconductor device and a method for manufacturing the same are provided to improve a threshold voltage by controlling a layout of metallization without using a channel stop implantation processing. CONSTITUTION: A field oxide(109) is formed at an isolation region of a semiconductor substrate(101). A gate(110) is formed by forming a first conductive layer on the field oxide and patterning the first conductive layer so as to isolate. After forming source and drain regions in the substrate, an interlayer dielectric(111) is formed on the gate. A first contact hole(113) is formed by selectively etching the interlayer dielectric(111). A bridge metal(114) for connecting the isolated gates is formed by filling a second conductive layer into the first contact hole(113).
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