发明名称 |
NONVOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME |
摘要 |
A nonvolatile memory device includes a semiconductor substrate, a charge trap layer formed on the semiconductor substrate, a blocking layer formed on the charge trap layer, and a gate electrode formed on the blocking layer. Sides of blocking layer extend laterally beyond sides of the charge trap layer and lateral sides of the gate electrode.
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申请公布号 |
US2009008701(A1) |
申请公布日期 |
2009.01.08 |
申请号 |
US20060555126 |
申请日期 |
2006.10.31 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM DONG-HYUN;MIN GYUNG-JIN;KANG CHANG-JIN;CHUNG SEUNG-PIL |
分类号 |
H01L29/00;H01L21/3205 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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