| 摘要 |
<p>PROBLEM TO BE SOLVED: To solve the problem that the overlap capacity between a source and a drain is large, at the same time, variation in the overlap capacity is generated within the surface, and flicker and crosstalk are caused in a large- screen precision device since the position relationship between a gate and the source/drain in exposure is determined by mask alignment in the conventional TFT regardless of a channel etch type or an etch stop type, and the conven tional TFT is not a self-alignment type. SOLUTION: Gate metal, a gate insulating layer, a semiconductor layer, and a lift-off layer are collectively etched for forming, an anodization film is formed on the side of the gate, a resist pattern is retreated, a self-alignment TFT for forming a source/drain region is used as a base, cryogenic and anodization techniques are introduced for rationalizing the formation process of a source/drain electrode and an opening formation process to the insulating layer, and also for reducing the number of processes. In the cryogenic technique, source/drain wiring anodized, and the need for a passivation insulating layer is eliminated. In the anodization technique, an exposed raster is anodized.</p> |
