| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser that is less in variation, with respect to COD deterioration and is high in reliability. SOLUTION: In the semiconductor laser 10 having an oscillation wavelength of 770-810 nm, a disordered area is formed as a window layer 20, by introducing an impurity to an MQW active layer 16 in the vicinity of the end face of the laser 10. The window layer 20 is irradiated with exciting light, and the wavelengthλdpl (nm) of the photoluminescence light of the layer 20 is measured. The COD level of a product is predicted in a middle stage of a process, based on degree of a blue shiftλbl which is the difference between the wavelengthλapl (nm) of the photoluminescence light generated, when the active layer 16 is irradiated with the exciting light and the wavelengthλdpl (nm) of the photoluminscence light generated with the window layer 20 is irradiated with the exciting light.
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