| 摘要 |
PROBLEM TO BE SOLVED: To provide a chemical and mechanical polishing slurry which hardly contaminates a wafer, makes no scratches on the wafer, and is capable of restraining a metal wiring from being lifted up and a method of manufacturing a copper wiring by the use of the same. SOLUTION: Chemical and mechanical polishing slurry contains an oxidizing agent, a pH adjustor, a chelate reagent, and deionized water. Furthermore, a copper wiring manufacturing method comprises a first step of forming a buried wiring region of prescribed shape in an interlayer insulating film formed on a semiconductor substrate, a second step of forming a barrier film on all the surface of the interlayer insulating film where the buried wiring region has been formed along the stepped surface, a third step of forming a copper seed layer on the barrier film along the stepped surface, and a fourth step of chemically and mechanically polishing only the buried wiring region so as to leave the above copper seed layer unremoved and to expose the barrier film.
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