| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor integrated circuit, wherein an active region of an N-channel MOSFET and an active region of a P-channel MOSFET which regions are positioned on the same SOI substrate have uniform carrier concentration distributions, and to provide a semiconductor integrated circuit obtained using the method. SOLUTION: P-type impurities are implanted in a peripheral part of the active region of the N-channel MOSFET, and N-type impurities are implanted in a peripheral part of the active region of the P-channel MOSFET. Above implantation is performed interpedently of implantation of impurities to the whole respective active regions, with region and quantity, which are conformed to peculiar decrease of carrier concentration which is generated in the respective peripheral parts. As a result, peculiar stop regions of the N-channel MOSFET and the P-channel MOSFET are formed, and decrease of carrier concentration in the peripheral parts of the active regions of the N-channel MOSFET and the P-channel MOSFET is prevented.
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