NONVOLATILE MEMORY DEVICE AND ERASE METHOD THEREOF

摘要

A nonvolatile memory device and erase method thereof is provided to perform an erase verification operation in the state of increase of the threshold voltage by supplying the negative voltage to a bulk. In a nonvolatile memory device, a memory cell array is comprised of a plurality of memory blocks. A row decoder(120) decodes row address provided from the row address buffer and it selects the word line according to the row decoder. Voltage generator(130) supplies a word line voltage to a plurality of word lines and the bulk(Bluk), and the page buffer(140) temporarily stores data of the page of the memory cell array. The page buffer temporarily stores data to be programmed in the selected page. A pass / fail detector(150) compares data values and the pass data value outputted from the page buffer erase at a verification operation.